
namibj
Now that I've done some Gain-Bandwidth Product maths I really want some T-coil's for bandwidth enhancement.
I low key have trouble believing these numbers, for that they suggest it's technically possible to yeet a lane of 25GBASE-KR-S out of a wafer.space die without necessarily melting said die as long as one ensures good cooling.
Without effective inductive peaking it's gonna involve rather lifetime-limiting hot carrier injection conditions, though, as the nfet_3v3_dss probably won't quite reach enough native GBW.
Yes I'm aware that prospect sounds kinda ridiculous.
I'm just getting the numbers/down-clocking-support cooked a little more before I go see how to get anywhere close to the abstract numbers I've been looking at since last night.
Even if that's too much it does suggest 10GBASE-KR to be actually quite realistic to pull off (even post-layout).
Ok welp I'm not attempting a C4 serializer, yet without C4 (i.e., mere C2), 25GBASE-KR-S would probably risk melting the gf180mcuD die.
Does not seem impossible though...
Might need flip chip though due to severe high frequency impedance of the bond wire.
10GBASE-KR with "only" a C2 architecture looks worryingly "easy" (decent limiting amplifier GBW, no peaking inductors needed, C2 doesn't need any ultra-fast 4:1 MUX unlike C4 (they're tricky to correctly common-mode bias), and overall it might not need any bandwidth extension trickery to function.)....
Hopefully I can be productive Saturday and do some trial layouting for the critical blocks of concern.