IHPs SG13G2 magic Pcells include this structure which doesn't actually come with any parameters to adjust and doesn't appear to have any notable further documentation I could realistically find; it supposedly has some care to it for LVS&DRC to go through in some sort of acceptable manner... but that's it.
As far as I understand it's a symmetric floating latching structure, some kind of DIAC I suppose; it's for ESD protection I think.
The bottom is symmetric.
One side is metal via'd up to one higher metal terminal; same for the other.
It's all encased in DNWELL (they call it nBuLay as it's also relevant for the SiGe HBT's the G2 process offers). It's also all thick oxide.
I disabled visibility of those layers for I hope obvious reasons.
1:24 a.m.
I think we should have all the doping layers needed on gf180mcuD to copy this structure for a coming e-test die; I'd hope we might have someone who knows somewhat more about the subject matter though or how to perhaps tcad the thankfully "just" 2D cross-section slice.
Luckily this could be modeled as just 3 electrodes (substrate plus the two obvious metal zones shorting the two contact areas and the corresponding gate poly together) of differing potential; not sure if Xyce's TCAD functionality allows the electrodes to be so split though... and of non-same material.
